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| 2SJ217 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source * Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SJ217 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings -60 20 -45 -180 -45 150 150 -55 to +150 Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS -60 20 -- -- -1.0 -- -- |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 16 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.033 0.045 25 3800 2000 490 30 235 670 450 -1.35 300 Max -- -- 10 -250 -2.0 0.042 0.06 -- -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V ns I F = -45 A, VGS = 0 I F = -45 A, VGS = 0, diF/dt = 50 A/s I D = -20 A, VGS = -10 V, RL = 1.5 Unit V V A A V Test conditions I D = -10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -50 V, VGS = 0 I D = -1 mA, VDS = -10 V I D = -20 A, VGS = -10 V*1 I D = -20 A, VGS = -4 V*1 I D = -20 A, VDS = -10 V*1 VDS = -10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test VGS(off) RDS(on) 2 2SJ217 Power vs. Temperature Derating 150 Channel Dissipation Pch (W) -200 O is per lim at ite ion d in by th R is DS Maximum Safe Operation Area ar ea 10 s -100 Drain Current ID (A) 100 -50 -20 -10 -5 (o n) 0 10 s PW D C pe O 1 m = s 10 m s (1 50 sh ra ti o n (T C = Ta = 25C ot ) 25 C ) 0 50 100 Case Temperature TC (C) 150 -2 -1 -2 -5 -10 -20 -50 -100 Drain to Source Voltage VDS (V) Typical Output Characteristics -100 -50 -10 V -6 V -5 V Pulse Test Drain Current ID (A) -40 Typical Forward Transfer Characteristics TC = -25C VDS = -10 V Pulse Test 25C -80 Drain Current ID (A) -60 -4 V -30 75C -40 -3 V -20 VGS = -2 V 0 -8 -20 -4 -12 -16 Drain to Source Voltage VDS (V) -20 -10 0 -1 -3 -4 -2 -5 Gate to Source Voltage VGS (V) 3 2SJ217 Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance RDS (on) () -2.5 Pulse Test -2.0 -50 A 0.1 VGS = -4 V 0.05 -10 V 0.02 0.01 Pulse Test 0.005 -2 -50 -100 -200 -5 -10 -20 Drain Current ID (A) -1.5 0.2 0.5 Static Drain to Source on State Resistance vs. Drain Current -1.0 -20 A ID = -10 A -0.5 0 -2 -6 -8 -4 -10 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance RDS (on) () Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance yfs (nS) 0.1 Pulse Test ID = -20 A -10 A 0.06 VGS = -4 V 20 10 5 2 -0.5 160 50 100 VDS = -10 V Pulse Test -25C TC = 25C 75C 200 Forward Transfer Admittance vs. Drain Current 0.08 0.04 ID = -50 A 0.02 VGS = -10 V -10, -20 A 0 -40 40 0 80 120 Case Temperature TC (C) -1 -5 -10 -20 -2 Drain Current ID (A) -50 2SJ217 Body to Drain Diode Reverse Recovery Time 5,000 10,000 di/dt = 50 A/s, VGS = 0 Ta = 25C Pulse Test 5,000 Ciss Capacitance C (pF) 2,000 Coss 1,000 500 Crss 200 VGS = 0 f = 1 MHz -20 -50 -10 -30 -40 Drain to Source Voltage VDS (V) 100 0 Reverse Recovery Time trr (ns) 2,000 1,000 500 200 100 50 -0.5 -1 -2 -5 -10 -20 Reverse Drain Current IDR (A) -50 Typical Capacitance vs. Drain to Source Voltage Dynamic Input Characteristics 0 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) VDD = -10 V -25 V -50 V 500 Switching Time t (ns) tf -4 VGS -8 100 50 td (on) 20 VGS = -10 V, PW = 2 s . < VDD = -30 V, duty = 1% . 10 -0.5 -1 200 tr VDS -40 VDD = -10 V -25 V -50 V -12 0 1,000 Switching Characteristics td (off) -20 -60 -80 ID = -45 A 0 40 120 160 80 Gate Charge Qg (nc) -20 200 -16 -100 -2 -5 -10 -20 Drain Current ID (A) -50 2SJ217 Reverse Drain Current vs. Source to Drain Voltage -100 Reverse Drain Current IDR (A) Pulse Test -80 -60 -10 V -40 VGS = 0,5 V -20 -5 V 0 -1.0 -2.5 -0.5 -1.5 -2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance S (t) 3 1 0.5 0.3 0.2 D=1 TC = 25C 0.1 0.1 0.05 0.02 0.03 e 0.01 t Puls ho 1S ch-c (t) = S (t) * ch-c ch-c = 0.83C/W, TC = 25C PDM PW T 1m 10 m Pulse Width PW (s) 100 m D = PW T 0.01 10 100 1 10 2SJ217 Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T. RL 90% Vin -10 V 50 VDD = 30 V Vout td (on) 10% tr td (off) 90% 90% 10% tf Vin 10% Switching Time Test Waveforms 7 Unit: mm 5.0 0.3 15.6 0.3 1.0 3.2 0.2 4.8 0.2 1.5 0.5 14.9 0.2 19.9 0.2 1.6 1.4 Max 2.0 2.8 18.0 0.5 1.0 0.2 2.0 0.6 0.2 3.6 0.9 1.0 5.45 0.5 5.45 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3P -- Conforms 5.0 g 0.3 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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